In 1982, he co-discovered the fractional quantum Hall effect.
[1] His research is related to molecular beam epitaxy (MBE).
In 1987, he was elected a member of the US National Academy of Engineering for contributions to the study of the physics of ultra-thin semiconducting layers through molecular beam epitaxy, leading to new physics and new devices.
In 2016, Gossard was named as a recipient of a National Medal of Technology and Innovation.
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