Sb2Te3 is a narrow-gap semiconductor with a band gap 0.21 eV; it is also a topological insulator, and thus exhibits thickness-dependent physical properties.

[8] The crystalline material comprises atoms covalently bonded to form 5 atom thick sheets (in order: Te-Sb-Te-Sb-Te), with sheets held together by van der Waals attraction.

Due to its layered structure and weak inter-layer forces, bulk antimony telluride may be mechanically exfoliated to isolate single sheets.

[3] Doping Sb2Te3 with iron introduces multiple Fermi pockets, in contrast to the single frequency detected for pure Sb2Te3, and results in reduced carrier density and mobility.

[9] Sb2Te3 forms the pseudobinary intermetallic system germanium-antimony-tellurium with germanium telluride, GeTe.