The normal form of gallium(II) sulfide as made from the elements has a hexagonal layer structure containing Ga24+ units which have a Ga-Ga distance of 248pm.

[1] An unusual metastable form, with a distorted wurtzite structure has been reported as being produced using MOCVD.

The metal organic precursors were di-tert-butyl gallium dithiocarbamates, for example GatBu2(S2CNMe2) and this was deposited onto GaAs.

[2] Single layers of gallium sulfide are dynamically stable two-dimensional semiconductors, in which the valence band has an inverted Mexican-hat shape, leading to a Lifshitz transition as the hole-doping is increased.

[3] Gallium(II) sulfide demonstrates nonlinear optical activities, including second-harmonic generation and two-photon excited fluorescence.