Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law.
As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device.
Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds (in case of synchronous circuits) and lower heat dissipation.
Due to the wide range of methods that can be used to cheaply form silicon dioxide layers, this material is used conventionally as the baseline to which other low permittivity dielectrics are compared.
In the second step, the organic phase is decomposed by UV curing or annealing at a temperature of up to 400 °C, leaving behind pores in the organosilicate low-κ materials.
Nevertheless, the strategic placement of air gaps can improve the chip's electrical performance without compromising critically its durability.