[3] While at Morehouse College, Williams received the Max C. Fleishman scholarship and was a member of the Society of Physics Students and the Atlanta University Center photography club.
[4] His thesis at Stanford was titled "The Effect of Chemical Reactivity and Charge Transfer on Gallium-Arsenide (110) Schottky Barrier Formation.
[3] His co-advisor was Arthur Schawlow, and he also studied under professors Ingolf Lindau, Piero Pianetta, C. Robert Helms and Walter Harrison while at Stanford.
[11] Williams has been a part of numerous professional organizations throughout his career, including AVS and the American Physical Society.
[1] Williams' research has focused on "achieving a fundamental understanding of the physical processes, growth morphology, interfacial strain and electronic structure modifications that occur at the surfaces and interfaces of epitaxially grown films and semiconductors," as well as the processing and growth morphology of 2-D metal dichalcogenides.