Bantval Jayant Baliga (born (1948-04-28)28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT).

[1][2] In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology, and in 2024, won the Finnish Millennium Technology Prize for his invention of the IGBT.

Baliga's father played pivotal roles in the founding of Indian television and electronics industries.

Baliga remembers reading IEEE proceeding during his high school days which were brought home by his father.

[6] He worked 15 years at the General Electric Research and Development Center in Schenectady, New York.