Ballistic deflection transistor

[3] A ballistic deflection transistor would be significant in acting as both a linear amplifier and a switch for current flow on electronic devices, which could be used to maintain digital logic and memory.

A transistor switching speed is greatly affected by how fast charge carriers (typically, electrons) can cross from one region to the next.

[2] One advantage of the ballistic deflection transistor is that because such device will use very little power (implementing adiabatic circuit), it will produce less heat, and therefore be able to operate faster or with higher duty cycle.

[3] Since early 1960s, there has been research aiming for the ballistic conduction, which lead to modern metal-insulator-metal diodes, but it failed to produce a three-terminal switch.

[4] The ballistic deflection transistor comprise the recent (in 2006) design been created by the Cornell Nanofabrication Facility, using a two-dimensional electron gas as the conducting medium.