Bernard S. Meyerson (born June 2, 1954) is an American solid state physicist.

Meyerson is a native of New York City, born on June 2, 1954.

[1][2] Meyerson was elected a fellow of the American Physical Society in 1998, "for the invention of ultra-high vacuum chemical vapor deposition and its application to low temperature silicon epitaxy, especially the fabrication of SiGe heterojunction bipolar integrated circuits for wireless telecommunications.

[2] Meyerson received the J. J. Ebers Award in 2000 from the IEEE Electron Devices Society.

[4] In 2002, Meyerson became an elected member of the National Academy of Engineering.