Gallium(II) telluride

Gallium telluride can be made by reacting the elements or by metal organic vapour deposition (MOCVD).

[1] GaTe produced from the elements has a monoclinic crystal structure.

GaTe is classified as a layered semiconductor (like GaSe and InSe which have similar structures).

It is a direct band gap semiconductor with an energy of 1.65eV at room temperature.

[3] A hexagonal form can be produced by low pressure metal organic vapour deposition (MOCVD) from alkyl gallium telluride cubane-type clusters e.g. from (t-butylGa( μ3-Te))4.

Gallium(II) telluride
Gallium(II) telluride
NFPA 704 four-colored diamond Health 4: Very short exposure could cause death or major residual injury. E.g. VX gas Flammability 0: Will not burn. E.g. water Instability 0: Normally stable, even under fire exposure conditions, and is not reactive with water. E.g. liquid nitrogen Special hazards (white): no code