The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment.

They can be turned on and off by a gate signal, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn-off times.

The drive circuit surrounds the device and a large circular conductor attaching to the edge of the IGCT is used.

The large contact area and short distance reduce both the inductance and resistance of the connection.

Reverse blocking capability adds to the forward voltage drop because of the need to have a long, low-doped P1 region.

The main applications are in variable-frequency inverters, drives, traction and fast AC disconnect switches.