It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages.
In contrast, when the transistor is turned off, unwanted current leakage is minimized by the thin insulating layer.
This allows the depleted substrate transistor to have 100 times less leakage than traditional silicon-on-insulator schemes.
Another innovation of Intel's depleted substrate transistor is the use of low resistance contacts on top of the silicon layer.
Another important element is the development of a new material that replaces silicon dioxide on the wafer.