James J. Coleman[1] (born May 15, 1950 in Chicago, IL) is an electrical engineer who worked at Bell Labs, Rockwell International, and the University of Illinois, Urbana.
Coleman joined Bell Labs, Murray Hill in 1976, where his initial assignment was in the Materials Science Research Department under the direction of Morton B. Panish.
His work there involved contributions to the development of 1.3 μm InGaAsP CW room temperature diode telecommunications lasers grown by liquid phase epitaxy (LPE).
In 1978, he went to Rockwell International, Anaheim to work with P. Daniel Dapkus on metalorganic chemical vapor deposition (MOCVD), which has become a major process in the manufacture of compound semiconductor devices.
Coleman has had significant involvement in the publications, conference, and leadership activities of the major professional societies associated with the field of photonics (IEEE, OSA, SPIE, APS, and AAAS).