[3][4] There is good agreement between these and other extrapolations that the lattice constant of pure zincblende MgSe is 0.59 nm.

On the basis of different extrapolations, a room temperature bandgap of 4.0 eV has been recommended for zincblende MgSe.

[2][3] Thin films of amorphous, wurtzite and rock-salt MgSe have been prepared by vacuum deposition of Mg and Se at cryogenic temperatures, followed by heating and annealing.

[5] Compound semiconductor alloys of MgSe, such as MgxZn1−xSe, have been prepared by molecular beam epitaxy.

[3][4] Samples of pure MgSe and Mg-rich MgxZn1−xSe (x > 0.7) readily react with water and oxidize in air.