Magneto-electric spin-orbit (MESO) is a technology designed for constructing scalable integrated circuits, that works with a different operating principle than CMOS devices such as MOSFETs, proposed by Intel,[1] that is compatible with CMOS device manufacturing techniques and machinery.
For testing, these architectures were made with production processes compatible with those used for CMOS devices since some CMOS devices are still necessary for interfacing with other circuits and for providing the clock signal for an integrated circuit, and for reusing existing production equipment: Tunneling FETs, graphene p-n junctions, ITFETs, BisFET, spinFETs, all spin logic, spin torque oscillators, domain wall logic, spin torque majority, spin torque triad, spin wave device, nano magnet logic, charge spin logic, piezo FETs, MITFETs, FeFETs and negative capacitance FETs were tested and it was found that none offered both improved performance characteristics and lower power consumption compared with CMOS.
[7][2] Compared to CMOS, MESO circuits can require less energy for switching, can have a lower operating voltage, feature a higher integration density, possess non-volatility which allows for ultra low standby power consumption, and the energy required to switch MESO devices scales down cubically with every miniaturization by a factor of two of the device.
In recent years, great efforts are being made in the scientific community in order to make the magnetoelectric effects work in nanostructure (thin film).
The main issue is that, when ferroelectric material transfers to thinfilm, it loses its FE properties, making it even more difficult to achieve a high efficiency-coupling of FE-FM (ME) at nanometer-size systems.