[1] Goldman studies atomic-scale design of electronic materials with a focus on the mechanisms of strain relaxation, alloy formation and diffusion, and correlations between microstructure and electronic, magnetic, and optical properties of semiconductor films, nanostructures, and heterostructures.
She received the Augustus Anson Whitney fellowship from the Radcliffe Institute for Advanced Study at Harvard from 2005 to 2006.
[1] She was elected a Fellow of the American Physical Society in 2012 for contributions to the fundamental understanding of strain relaxation, alloy formation, and diffusion, and their applications to nanostructure processing.
[3] She was also elected Fellow of the American Vacuum Society in 2012, where she had previously received the Peter Mark Memorial Award in 2002.
[5] In 2021, Goldman was elected Fellow of the American Association for the Advancement of Science (AAAS).