students at the University of Texas, where he is the Cockrell Family Regents Chair Professor.

In 1986, he was awarded Best Paper at the IEEE International Solid State Circuits Conference for work on polysilicon transistors and dynamic random access trench memory cells used by Texas Instruments in the world's first 4 Megabit DRAM.

He demonstrated the first three-terminal MOS tunnel FET as well as the first high-k dielectric/silicon-germanium quantum dot gates for flash memory.

[4] He is active in the areas of beyond CMOS nanoelectronic transistors based on 2D materials and spintronics, fabrication and modeling of advanced MOSFETs, and solar cells.

He is co-author with former Dean of the Cockrell School of Engineering Ben G. Streetman of the textbook Solid State Electronic Devices, currently in its 7th edition.