Sorab (Soli) K. Ghandhi (1 January 1928 - 6 July 2018) was a professor Emeritus at Rensselaer Polytechnic Institute (RPI) known for his pioneering work in electrical engineering and microelectronics education, and in the research and development of Organometallic Vapor Phase Epitaxy (OMVPE) for compound semiconductors.
In addition to basic semiconductor physics, it covered topics such as Crystal Growth, Phase Diagrams, Diffusion, Oxidation, Epitaxy, Etching and Photolithography, which were not typical of the background of electrical engineers.
Following the work of Manasevit in 1968,[7] he started the first university program on the OMVPE of compound semiconductors in 1970, and conducted research with his students in this area until retirement.
His research in OMVPE included the growth and characterization of GaAs,[8] InAs, GaInAs, InP, CdTe, HgCdTe and ZnSe materials and devices, which resulted in over 180 papers.
[13] Concurrent with his research activities, he also wrote two books on VLSI fabrication principles which included a comprehensive, unified treatment of Silicon and GaAs materials technology.