He is Chief Scientist at SPINTEC (Spintronics and Technology of Components), a CEA/CNRS/UGA research laboratory that he co-founded in 2002 in Grenoble, France.
He then enrolled at the University Joseph Fourier, and earned his Doctorate in Physics in 1985, and completed his Habilitation à diriger des Recherches in 2005.
[5] Dieny started his career as a Permanent junior Researcher at CNRS/ Laboratoire de magnétisme Louis Néel in 1988.
[8] Dieny also developed a modeling tool based on Fuchs Sondheimer theory allowing the calculation of the resistance and GMR of any spin-valve structures from the microscopic transport parameters.
In 1995, he participated to the worldwide first realization of spin-electronic devices combining semiconductor and magnetic layers: the spin-valve transistor.
[10] This work carried out in collaboration with Twente University, had a very strong impact and stimulated lot of subsequent studies in the field of Ballistic Electron Emission Microscopy (BEEM).
His team also proposed and demonstrated a novel concept of MRAM utilizing a perpendicular shape anisotropy of the storage layer to increase the memory retention at advanced technology nodes (sub 20 nm).