Fluctuation electron microscopy (FEM), originally called Variable Coherence Microscopy before decoherence effects in the sample rendered that naming moot, is a technique in electron microscopy that probes nanometer-scale or "medium-range" order in disordered materials.
The first studies were performed on amorphous Si (Treacy and Gibson 1997)[1] and later on hydrogenated amorphous silicon.
[2]
This condensed matter physics-related article is a stub.
You can help Wikipedia by expanding it.