HgTe bonds are weak leading to low hardness values.

[1][2][3] N-type doping can be achieved with elements such as boron, aluminium, gallium, or indium.

P-type doping is also achieved by introducing zinc, copper, silver, or gold.

Topological insulators cannot support an electric current in the bulk, but electronic states confined to the surface can serve as charge carriers.

Their enthalpy of formation, around −32kJ/mol, is less than a third of the value for the related compound cadmium telluride.