Igor Grekhov

[2] After finishing secondary school, Grekhov studied electrical engineering at the Bauman Moscow State Technical University.

Then he spent several years (1958—1962) in industry, working as a research engineer and head of the laboratory at the “Electrovipryamitel” factory in Saransk (Mordovia, USSR).

Grekhov’s research work always concentrated on the physics of solid-state devices, with a special point related to their application in power electronics.

His interests cover all the steps from background theoretical studies through a trial sample fabrication up to coordination of mass production of power devices including converters.

The most important results are:[4] The research in Grekhov’s laboratory includes also some other problems of the semiconductor device physics: tunneling phenomena in MIS-structures, ferroelectric memories, porous silicon and superconductive ceramics.