Joan Redwing

She received her degree in 1994;[2] her thesis was A study of dopant incorporation into gallium arsenide grown by metal-organic vapor phase epitaxy.

She moved to Epitronics Inc., an Arizona subsidiary of ATMI, in 1997 where she held the position of Manager of III-V Technology and led a epitaxial wafer manufacturing group.

[6] As a 2016 Fulbright Scholar to Sweden, Redwing spent three months at Lund University with the research group of Lars-Erik Wernersson [Wikidata] to study III-V nanowire materials as replacements for conventional silicon semiconductors.

[1][12][13] She chaired the 2018 Materials Research Society Fall Meeting with Kristen H. Brosnan, David LaVan, Patrycja Paruch, and Takao Someya.

[14] Redwing was elected a Fellow of the American Physical Society in 2012, after a nomination from the APS Division of Materials Physics, for "key contributions to the mechanistic understanding of materials synthesis by vapor growth, including Si and SiGe nanowires, group-III nitrides and boride-based superconductors.