Silicon nanowire

Initial synthesis of SiNWs is often accompanied by thermal oxidation steps to yield structures of accurately tailored size and morphology.

The reason that SiNWs are considered one of the most important one-dimensional materials is they could have a function as building blocks for nanoscale electronics assembled without the need for complex and costly fabrication facilities.

[1] SiNWs exhibit charge trapping behavior which renders such systems of value in applications necessitating electron hole separation such as photovoltaics, and photocatalysts.

[5] The ability for lithium ions to intercalate into silicon structures renders various Si nanostructures of interest towards applications as anodes in Li-ion batteries (LiBs).

[7] Charge trapping behavior and tunable surface governed transport properties of SiNWs render this category of nanostructures of interest towards use as metal insulator semiconductors and field effect transistors,[8] where the silicon nanowire is the main channel of the FET which connect the source to the drain terminal, facilitating electron transfer between the two terminals with further applications as nano-electronic storage devices,[9] in flash memory, logic devices as well as chemical, gas and biological sensors.