Srabanti Chowdhury

[2] She was a graduate student at the University of California, Santa Barbara, where she worked alongside Umesh Mishra.

[3][4] During her doctoral research, she developed vertical gallium nitride (GaN) devices for power conversion.

[6] These single crystal GaN devices achieved a record-high breakdown electric field.

Chowdhury dedicated her early research to the creation of very low loss transistors for power conversion applications.

Building upon her doctoral research, she identified and optimized fabrication processes to create GaN vertical devices.