Intrinsic breakdown is caused by electrical stress induced defect generation.
The failure types for integrated circuit (IC) components follow the classic bath tub curve.
There is infant mortality, which is decreasing failure rate typically due to manufacturing defects.
Performance of the IC components can be evaluated for semiconductor wear out mechanisms including TDDB for any given operating conditions.
[1] These distributions are used to create reliability plots and to predict the TDDB behavior of oxide at other voltages.