Each indium atom is five coordinate, in a distorted trigonal planar configuration, the three shortest bonds,(ca.

[5] The rhombohedral form of InMe3 consists of cyclic hexamers with 12 membered (InC)6 rings in an extended chair conformation.

[7] Indium is a component of several compound semiconductors, including as InP, InAs, InN, InSb, GaInAs, InGaN, AlGaInP, AlInP, and AlInGaNP.

These materials are prepared by metalorganic vapour phase epitaxy (MOVPE) and TMI is the preferred source for the indium component.

[9][10] The vapor pressure equation log P (Torr) = 10.98–3204/T (K) describes TMI within a wide range of MOVPE growth conditions.