Velocity overshoot is a physical effect resulting in transit times for charge carriers between terminals that are smaller than the time required for emission of an optical phonon.
[1][2] The velocity therefore exceeds the saturation velocity up to three times, which leads to faster field-effect transistor or bipolar transistor switching.
The effect is noticeable in the ordinary field-effect transistor for the gates shorter than 100 nm.
[3] The device intentionally designed to benefit from the velocity overshoot is called ballistic collection transistor[4] (not to be mistaken with the ballistic deflection transistor).
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