[needs update] The resolutions of a "14 nm" device are difficult to achieve in a polymeric resist, even with electron beam lithography.
In addition, the chemical effects of ionizing radiation also limit reliable resolution to about 30 nm, which is also achievable using current state-of-the-art immersion lithography.
[10][needs update] On January 17, 2011, IBM announced that they were teaming up with ARM to develop "14 nm" chip processing technology.
[14][needs update] On May 17, 2011, Intel announced a roadmap for 2014 that included "14 nm" transistors for their Xeon, Core, and Atom product lines.
[16] In 2002, an international team of researchers at UC Berkeley, including Shibly Ahmed (Bangladeshi), Scott Bell, Cyrus Tabery (Iranian), Jeffrey Bokor, David Kyser, Chenming Hu (Taiwan Semiconductor Manufacturing Company), and Tsu-Jae King Liu, demonstrated FinFET devices down to 10 nm gate length.
[19][needs update] In December 2007, Toshiba demonstrated a prototype memory unit that used 15-nanometre thin lines.
[20] In December 2009, National Nano Device Laboratories, owned by the Taiwanese government, produced a "16 nm" SRAM chip.
"Intel's 14 nanometer technology uses second-generation tri-gate transistors to deliver industry-leading performance, power, density and cost per transistor," said Mark Bohr, Intel senior fellow, Technology and Manufacturing Group, and director, Process Architecture and Integration.
[31][needs update] In February 2015, Samsung announced that their flagship smartphones, the Galaxy S6 and S6 Edge, would feature "14 nm" Exynos systems on chip (SoCs).
[36][37][needs update] In June 2016, AMD released its Radeon RX 400 GPUs based on the Polaris architecture, which incorporated "14 nm" FinFET technology from Samsung.
[38][needs update] On August 2, 2016, Microsoft released the Xbox One S, which utilized "16 nm" by TSMC.