1T-SRAM

Due to its one-transistor bit cell, 1T-SRAM is smaller than conventional (six-transistor, or "6T") SRAM, and closer in size and density to embedded DRAM (eDRAM).

Some engineers use the terms 1T-SRAM and "embedded DRAM" interchangeably, as some foundries provide MoSys's 1T-SRAM as "eDRAM".

In the latter case, the cache provides the data and allows time for an unused row of the active bank to be refreshed.

It is significantly faster speed than eDRAM, and the "quad-density" variant is only slightly larger (10–15% is claimed).

Also, some of those steps require very high temperatures and must take place after the logic transistors are formed, possibly damaging them.