BSIM (Berkeley Short-channel IGFET Model)[1] refers to a family of MOSFET transistor models for integrated circuit design.
It also refers to the BSIM group located in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, that develops these models.
As the devices become smaller each process generation (see Moore's law), new models are needed to accurately reflect the transistor's behavior.
BSIM models, developed at UC Berkeley, are one of these standards.
Other models supported by the council are PSP, HICUM, and MEXTRAM Archived 2014-12-28 at the Wayback Machine.