The nature of collision cascades can vary strongly depending on the energy and mass of the recoil/incoming ion and density of the material (stopping power).
This kind of a cascade can be theoretically well treated using the binary collision approximation (BCA) simulation approach.
The electronic stopping power can be readily included in binary collision approximation[4] or molecular dynamics (MD) simulations.
If the kinetic energy of the atoms in the region of dense collisions is recalculated into temperature (using the basic equation E = 3/2·N·kBT), one finds that the kinetic energy in units of temperature is initially of the order of 10,000 K. Because of this, the region can be considered to be very hot, and is therefore called a heat spike or thermal spike (the two terms are usually considered to be equivalent).
But once the Cu ion would slow down enough, the nuclear stopping power would increase and a heat spike would be produced.
Moreover, many of the primary and secondary recoils of the incoming ions would likely have energies in the keV range and thus produce a heat spike.
[23] Swift heavy ions, i.e. MeV and GeV heavy ions which produce damage by a very strong electronic stopping, can also be considered to produce thermal spikes[24][25] in the sense that they lead to strong lattice heating and a transient disordered atom zone.
[33] Prolonged irradiation of many materials can lead to their full amorphization, an effect which occurs regularly during the ion implantation doping of silicon chips.
[34] The defects production can be harmful, such as in nuclear fission and fusion reactors where the neutrons slowly degrade the mechanical properties of the materials, or a useful and desired materials modification effect, e.g., when ions are introduced into semiconductor quantum well structures to speed up the operation of a laser.
[36] A curious feature of collision cascades is that the final amount of damage produced may be much less than the number of atoms initially affected by the heat spikes.
[1] On the other hand, in semiconductors and other covalently bonded materials the damage production is usually similar to the number of displaced atoms.