The e-beam prober is capable of measuring voltage and timing waveforms on internal semiconductor signal structures.
Waveforms may be measured on metal line, polysilicon and diffusion structures that have an electrically active, changing signal.
The e-beam prober generates an SEM image by raster-scanning a focused electron beam over a selected region of the semiconductor surface.
The varying numbers of secondary electrons reaching the detector are interpreted to produce the SEM image.
During waveform acquisition mode, the primary electron beam is focused on a single point on the device surface.