Everspin Technologies, Inc. is a publicly traded semiconductor company headquartered in Chandler, Arizona, United States.

This characteristic makes MRAM suitable for a large number of applications where persistence, performance, endurance and reliability are critical.

The path to MRAM began in 1984 when the GMR effect was discovered by Albert Fert and Peter Grünberg.

[4] Twelve years later, in 1996, spin-transfer torque is proposed,[5][6] enabling a magnetic tunnel junction or spin valve to be modified with a spin-polarized current.

MRAM stores information in magnetic material that is integrated with silicon circuitry to deliver the speed of RAM with the non-volatility of Flash.

[citation needed] Everspin's current MRAM products are based on 180-nm, 130-nm, 40-nm, and 28-nm process technology nodes and industry standard packages.

[citation needed] Toggle MRAM memory utilizes the magnetism of electron spin, enabling the storage of data without volatility or wear-out.

[citation needed] Production densities include 128Kb to 16Mb; available in Parallel [28] and SPI interfaces;[29] DFN, SOIC, BGA, and TSOP2 packages Spin-transfer torque is a type of MRAM memory (STT-MRAM) built with a perpendicular MTJ that uses the spin-transfer torque property (the manipulation of the spin of electrons with a polarizing current) to manipulate the magnetic state of the free layer to program, or write, the bits in the memory array.

STT-MRAM products from Everspin are compatible with JEDEC standard interfaces for DDR3 and DDR4 (with some modifications needed for MRAM technology).

These devices can store up to 1GB in data today, with greater capacities planned as MRAM densities scale up over time.

Future versions will be based on the upcoming 1Gb ST-MRAM densities which recently began sampling to customers.