FET amplifier

[1] For ideal FET equivalent circuit, voltage gain is given by,

There are three types of FET amplifiers, depending on which terminal is the common input and output.

(This is similar to a bipolar junction transistor (BJT) amplifier.)

[2] The basic principle of the field-effect transistor (FET) amplifier was first proposed by Austro-Hungarian physicist Julius Edgar Lilienfeld in 1925.

[4] In 1955, Carl Frosch and Lincoln Derrick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed surface passivation effects.

Spitzer studied the mechanism of thermally grown oxides and fabricated a high quality Si/SiO2 stack in 1960.

[9][10][11] Following this research, Mohamed Atalla and Dawon Kahng proposed a silicon MOS transistor in 1959[12] and successfully demonstrated a working MOS device with their Bell Labs team in 1960.

[13][14] Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and H. K. Gummel and R. Lindner who characterized the device.