The charge accumulates on this capacitor and may cause adverse effects, for example, opening of parasitic transistors in the structure and causing off-state leakages, resulting in higher current consumption and in case of DRAM in loss of information from the memory cells.
It also causes the history effect, the dependence of the threshold voltage of the transistor on its previous states.
One countermeasure to floating body effect involves use of fully depleted (FD) devices.
[3] While floating body effect presents a problem in SOI DRAM chips, it is exploited as the underlying principle for Z-RAM and T-RAM technologies.
[5] Another similar technology (and Z-RAM competitor) developed at Toshiba[6][7] and refined at Intel is Floating Body Cell (FBC).