Fujio Masuoka

Masuoka attended Tohoku University in Sendai, Japan, where he earned an undergraduate degree in engineering in 1966 and doctorate in 1971.

[13] But it was the American company Intel which made billions of dollars in sales on related technology.

[13] In 1988, a Toshiba research team led by Masuoka demonstrated the first gate-all-around (GAA) MOSFET (GAAFET) transistor.

[13] Masuoka received the 1997 IEEE Morris N. Liebmann Memorial Award of the Institute of Electrical and Electronics Engineers.

[3] He has been suggested as a potential candidate for the Nobel Prize in Physics, along with Robert H. Dennard who invented single-transistor DRAM.