He then joined the U.S. Borax Research Corp. in Anaheim, California, but in 1960 left for North American Aviation.
In 1963 he was the first to document epitaxial growth of silicon on sapphire, and in 1968 was the first to publish on metalorganic chemical vapor deposition (MOCVD) for the epitaxial growth of GaAs and many other III-V, II-VI and IV-VI semiconductors, including the first report of the growth of single-crystal GaN and AlN on (0001) sapphire,[1] the process used worldwide today for the commercial production of all visible LEDs.
Manesevit holds 16 patents, and was awarded the 1985 IEEE Morris N. Liebmann Memorial Award "for pioneering work in metalorganic chemical vapor deposition, epitaxial-crystal reactor design, and demonstration of superior quality semiconductor devices grown by this process."
Stated by Russell D. Dupuis, "In the mid-1970s, Rockwell International Electronics Operations (Anaheim CA) was developing the guidance systems for Minuteman missiles.
My colleague, Harold Manasevit had the idea of growing silicon on a sapphire substrate, which was an insulator from radiation and infinitely stable.