Gallium indium antimonide

Gallium indium antimonide, also known as indium gallium antimonide, GaInSb, or InGaSb (GaxIn1-xSb), is a ternary III-V semiconductor compound.

GaInSb refers generally to any composition of the alloy.

The bandgap and lattice constant of GaInSb alloys are between those of pure GaSb (a = 0.610 nm, Eg = 0.73 eV) and InSb (a = 0.648 nm, Eg = 0.17 eV).

[4] Over all compositions, the bandgap is direct, like in pure GaSb and InSb.

InGaSb and InGaSb-containing heterostructures have been studied for use in near- to mid-infrared photodetectors,[6][7][8] transistors,[9][10] and hall effect sensors.