Integrated passive devices
It is beneficial for the electronics system design if the effect of the substrate and the possible package to the performance of IPDs can be neglected or known.
Manufacturing of IPDs used include thick[12] and thin film[13][14] technologies and variety of integrated circuit processing steps or modifications (like thicker or different metals than aluminum or copper) of them.
Depending on the manufacturing technology of integrated passives high capacitance or resistor values with a required tolerance may be hard to meet.
Custom designed passives can be considered to be used after careful technical and economical analysis in volume manufacturing, if time-to-market and cost targets of the product(s) can be met.
Development and understanding of new materials and assembly techniques are a key enabler for both integrated and discrete passive devices.
3D passive integration in silicon is one of the technologies used to manufacture Integrated Passive Devices (IPDs), enabling high-density trench capacitors, metal-insulator-metal (MIM) capacitors, resistors, high-Q inductors, PIN, Schottky or Zener diodes to be implemented in silicon.
Today portable electronic systems include roughly 2–40 discrete passive devices/integrated circuit or module.
Many functional blocks such as impedance matching circuits, harmonic filters, couplers and baluns and power combiner/divider can be realized by IPDs technology.
Trends towards applications with small size, portability and wireless connectivity have stretched various implementation technologies to be able to realize passive components.
