Mitiko Miura-Mattausch (Japanese: 三浦 道子, born 1949)[1] is a Japanese electronics engineer specializing in the design, modeling, and simulation of electronic components based on semiconductors, including MOSFETs and new models for transistors in LDMOS.
[2][3] Miura-Mattausch has a doctorate from Hiroshima University.
[4] She was a researcher in Germany at the Max Planck Institute for Solid State Research from 1981 to 1984, and at Siemens from 1984 to 1996.
In 1996 she returned to Japan as a professor in the Hiroshima University Faculty of Engineering, taking a special appointment in 2015 with the HiSIM (Hiroshima-University STARC IGFET Model) Research Center.
[2] Miura-Mattausch was elected as an IEEE Fellow in 2007, "for contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling".