It is a type of nonvolatile random-access memory based on the position of carbon nanotubes deposited on a chip-like substrate.

[1] Each NRAM "cell" consists of an interlinked network of CNTs located between two electrodes as illustrated in Figure 1.

The CNT fabric is located between two metal electrodes, which is defined and etched by photolithography, and forms the NRAM cell.

In the 1 state, the CNTs (or a portion of them) are in contact and remain contacted due to Van der Waals forces between the CNTs, resulting in a low resistance or high current measurement state between the top and bottom electrodes.

After the applied voltage is removed, the CNTs remain in a 1 or low resistance state due to physical adhesion (Van der Waals force) with an activation energy (Ea) of approximately 5eV.

NRAMs are fabricated by depositing a uniform layer of CNTs onto a prefabricated array of drivers such as transistors as shown in Figure 1.

With the top electrode exposed, the next level of metal wiring interconnect is fabricated to complete the NRAM array.

Figure 3 illustrates one circuit method to select a single cell for writing and reading.

Thus the power needed to write and retain the memory state of the device is much lower than DRAM, which has to build up charge on the cell plates.

This means that NRAM might compete with DRAM in terms of cost, but also require less power, and as a result also be much faster because write performance is largely determined by the total charge needed.

NRAM can theoretically reach performance similar to SRAM, which is faster than DRAM but much less dense, and thus much more expensive.

Flash systems include a "charge pump" that slowly builds up power and releases it at higher voltage.

For this reason flash has a limited number of writes before the device will no longer operate effectively.

Early MRAM used field induced writing,[3] reached a limit in terms of size, which kept it much larger than flash devices.

[5] PRAM is based on a technology similar to that in a writable CD or DVD, using a phase-change material that changes its magnetic or electrical properties instead of its optical ones.

[8] In August 2008, Lockheed Martin acquired an exclusive license for government applications of Nantero's intellectual property.

[11] The company was quiet until another round of funding and collaboration with the Belgian research center imec was announced in November 2012.

[16] 31 Aug 2016: Two Fujitsu semiconductor businesses are licensing Nantero NRAM technology with joint Nantero–Fujitsu development to produce chips, announced in 2018.