Paul R. Berger (born 8 May 1963) is a professor in electrical and computer engineering at Ohio State University and physics (by courtesy),[1] and a distinguished visiting professor (Docent) at Tampere University in Finland, recognized for his work on self-assembled quantum dots under strained-layer epitaxy, quantum tunneling based semiconductor devices and solution processable flexible electronics.

Born in Midwestern United States, but raised in the Greater Boston, Massachusetts area, Berger attended Phillips Academy in Andover,_Massachusetts.

[7] In 1998, as part of a Quantum MOS team under a DARPA Ultra project, Berger invented Si/SiGe resonant interband tunneling diodes, the first viable Si-based negative differential resistance with the potential of being fully integrated into the mainstream Si CMOS integrated circuits technology.

[8] [9] And in 2011, Berger was elevated to IEEE Fellow for "contributions to the understanding, development, and fabrication of silicon-based resonant interband tunneling devices and circuits.

"[2] In 1999, Berger entered the field of solution-processable flexible electronics with sabbatical visits to the Max Planck Institute for Polymer Research in Mainz, Germany and Cambridge Display Technology, then in Cambridge, England, where he generated patents on organic light-emitting diodes (OLED).