Aluminium antimonide (AlSb) is a semiconductor of the group III-V family containing aluminium and antimony.
The indirect bandgap is approximately 1.6 eV at 300 K, whereas the direct band gap is 2.22 eV.
Its electron mobility is 200 cm2·V−1·s−1 and hole mobility 400 cm2·V−1·s−1 at 300 K. Its refractive index is 3.3 at a wavelength of 2 μm, and its dielectric constant is 10.9 at microwave frequencies.
[1] AlSb can be reacted with other III-V materials to produce ternary materials including AlInSb, AlGaSb and AlAsSb.
It burns to produce aluminium oxide and antimony trioxide.