Aluminium indium antimonide

AlInSb films have been grown by molecular beam epitaxy and metalorganic chemical vapor deposition[1] on gallium arsenide and gallium antimonide substrates.

It is typically incorporated into layered heterostructures with other III-V compounds.

[4] AlInSb has been employed as a barrier material and dislocation filter for InSb quantum wells and in InSb-based devices.

[5] AlInSb has been used as the active region of LEDs and photodiodes to generate and detect light at mid-infrared wavelengths.

These devices can be optimized for performance around 3.3 μm, a wavelength of interest for methane gas sensing.

Dependence of the direct and indirect band gaps of AlInSb on composition at room temperature (T = 300 K). [ 2 ] [ 3 ]