[1] His research led to the first generation of voltage-scaled deep-submicron CMOS with sufficient performance to totally replace bipolar technology in IBM mainframes and enable new high-performance UNIX servers.
He received his doctorate from RPI in electrical engineering as well with a thesis on the interface behavior of semiconductor devices, and joined IBM Thomas J Watson Research Center in 1984.
At IBM, Dr. Davari worked on ways to improve MOSFET (metal–oxide–semiconductor field-effect transistor)[7] and CMOS (complementary metal–oxide–semiconductor) technology,[8] which provides the basis for much of today's semiconductor processing.
[12] In 1987, Dr. Davari led an IBM research team that demonstrated the first MOSFET with 10 nanometer gate oxide thickness, using tungsten-gate technology.
SRDC attracted many industry partners, including semiconductor manufacturers, tools vendors, material suppliers, and chip design houses.
The users included the big three in gaming chips Sony, Nintendo, and Microsoft’s Xbox--along with Apple for their Mac offerings and AMD.