[4] The material was first created in 2010 by growing graphene on copper foil exposed to xenon difluoride at 30 °C.

[1] It was discovered soon after that fluorographene could also be prepared by combining cleaved graphene on a gold grid while being exposed to xenon difluoride at 70 °C.

[3] The structure of fluorographene can be derived from the structure of graphite monofluoride (CF)n, which consists of weakly bound stacked fluorographene layers, and its most stable conformation (predicted for the monocrystal) contains an infinite array of trans-linked cyclohexane chairs with covalent C–F bonds in an AB stacking sequence.

[9][10][11][12] Fluorographene is considered a wide gap semiconductor, because its I-V characteristics are strongly nonlinear with a nearly gate-independent resistance greater than 1 GΩ.

[8] It has recently been demonstrated that using fluorographene as a passivation layer in Field Effect Transistors (FETs) featuring a graphene channel, carrier mobility increases significantly.

[13] Fluorographene is susceptible for nucleophilic substitution and reductive defluorination, which makes it an extraordinary precursor material for synthesis of numerous graphene derivatives.

[23][24] An overview on preparation, reactivity and properties of halogenated graphenes in available in ACS Nano journal free of charge.