Hafnium disulfide is an inorganic compound of hafnium and sulfur.

It is a layered dichalcogenide with the chemical formula is HfS2.

A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor.

[4] High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes.

[5] Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.