Modulation doping

Modulation doping is a technique for fabricating semiconductors such that the free charge carriers are spatially separated from the donors.

Because this eliminates scattering from the donors, modulation-doped semiconductors have very high carrier mobilities.

Modulation doping was conceived in Bell Labs in 1977 following a conversation between Horst Störmer and Ray Dingle,[1] and implemented shortly afterwards by Arthur Gossard.

Störmer and Dan Tsui used a modulation-doped wafer to discover the fractional quantum Hall effect.

[4] One advantage of modulation doping is that the charge carriers cannot become trapped on the donors even at the lowest temperatures.