The thinnest film of PtSi would consist of two alternating planes of atoms, a single sheet of orthorhombic structures.

The standard method involves depositing a thin film of pure platinum onto silicon wafers and heating in a conventional furnace at 450–600 °C for a half an hour in inert ambients.

The process cannot be carried out in an oxygenated environment, as this results in the formation of an oxide layer on the silicon, preventing PtSi from forming.

[5] A secondary technique for synthesis requires a sputtered platinum film deposited on a silicon substrate.

Oxygen is extremely detrimental to the reaction, as it will bind preferably to Pt, limiting the sites available for Pt–Si bonding and preventing the silicide formation.

To avoid this issue inert ambients are used, as well as small annealing chambers to minimize amount of potential contamination.

[5] The cleanliness of the metal film is also extremely important, and unclean conditions result in poor PtSi synthesis.