Sasikanth Manipatruni

[5] Manipatruni contributed to developments in silicon photonics, spintronics and quantum materials.

[6][7][8] Manipatruni is a co-author of 50 research papers and ~400 patents[9] (cited about 10000 times [5]) in the areas of electro-optic modulators,[10][11] Cavity optomechanics,[12][13] nanophotonics & optical interconnects,[14][15] spintronics,[16][17] and new logic devices for extension of Moore's law.

[20] Later, he received a bachelor's degree in Electrical Engineering and Physics from IIT Delhi in 2005 where he graduated with the institute silver medal.

[21] He also completed research under the Kishore Vaigyanik Protsahan Yojana[22] at Indian Institute of Science working at Inter-University Centre for Astronomy and Astrophysics and in optimal control[23] at Swiss Federal Institute of Technology at Zurich.

He has co-authored academic research with Michal Lipson, Alexander Gaeta, Keren Bergman, Ramamoorthy Ramesh, Lane W. Martin, Naresh Shanbhag,[25] Jian-Ping Wang,[26] Paul McEuen, Christopher J. Hardy, Felix Casanova,[27] Ehsan Afshari, Alyssa Apsel, Jacob T. Robinson,[28] fr:Manuel Bibes spanning Condensed matter physics, Electronics and devices, Photonics, Circuit theory, Computer architecture and hardware for Artificial intelligence areas.

Manipatruni's PhD thesis was focused on developing the then nascent field of silicon photonics by progressively scaling the speed of electro-optic modulation from 1 GHz[29] to 12.5 Gbit/s,[30] 18 Gbit/s [31] and 50 Gbit/s[32] on a single physical optical channel driven by a silicon photonic component.

The significance of silicon for optical uses can be understood as follows: nearly 95% of modern Integrated circuit technology is based on silicon-based semiconductors which have high productivity in Semiconductor device fabrication due to the use of large single crystal wafers and extraordinary control of the quality of the interfaces.

However, Photonic integrated circuits are still majorly manufactured using III-V compound semiconductor materials and II-VI semiconductor compound materials, whose engineering lags silicon industry by several decades (judged by number of wafers and devices produced per year).

[37]In combination with Keren Bergman at Columbia University, micro-ring modulator research led to demonstration of a number of firsts in long-distance uses of silicon photonics utilizing silicon based injection mode electro-optic modulators including first demonstration of long-haul transmission using silicon microring modulators[38] first Error-free transmission of microring-modulated BPSK,[39] First Demonstration of 80-km Long-Haul Transmission of 12.5-Gb/s Data Using Silicon Microring Resonator Electro-Optic Modulator,[40] First Experimental Bit-Error-Rate Validation of 12.5-Gb/s Silicon Modulator Enabling Photonic Networks-on-Chip.

While originally considered thermally unstable,[45] by early 2020's micro-ring modulators have received wide adoption for computing needs at Intel [46][47] Ayar Labs,[48] Global foundries [49] and varied optical interconnect usages.

Manipatruni and Christopher J. Hardy applied integrated photonic links to the Magnetic resonance imaging to improve the signal collection rate from the MRI machines via the signal collection coils [50] while working at the General Electric's GE Global Research facility.

[52] Manipatruni proposed the first observation that optical radiation pressure leads to non-reciprocity in micro cavity opto-mechanics in 2009 [53][13] in the classical electro-magnetic domain without the use of magnetic isolators.

This work [53][13] proposed that breaking of the reciprocity (i.e. properties of media for forward and backward moving light can be violated) is observable in microscale optomechanical systems due to their small mass, low mechanical losses and high amplification of light due to long confinement times.

Later work has established the breaking of reciprocity in a number of nanophotonic conditions including time modulation and parametric effects in cavities.

He developed an extended modified nodal analysis that uses vector circuit theory [65] for spin-based currents and voltages using modified nodal analysis which allows the use of spin components inside VLSI designs used widely in the industry.

[66][67] The circuit modeling is based on theoretical work[68] by Supriyo Datta[69][70] and Gerrit E. W.

[78][79] In 2011, utilizing the discovery of Spin Hall effect and Spin–orbit interaction in heavy metals from Robert Buhrman,[80] Daniel Ralph [81] and Ioan Miron[82] in Period 6 element transition metals [83][82] Manipatruni proposed an integrated spin-hall effect memory[84] (Later named Spin-Orbit Memory to comprehend the complex interplay of interface and bulk components of the spin current generation[85]) combined with modern Fin field-effect transistor transistors[86] to address the growing difficulty with embedded Static random-access memory in modern Semiconductor process technology.

SOT-MRAM for SRAM replacement spurred significant research and development leading to successful demonstration of SOT-MRAM combined with Fin field-effect transistors in 22 nm process and 14 nm process at various foundries.

[87][88][89] Working with Jian-Ping Wang,[90] Manipatruni and collaborators were able to show evidence of a 4th elemental ferro-magnet.

Manipatruni proposed [18] that spintronic and multiferroic systems are leading candidates for achieving attojoule-class logic gates for computing, thereby enabling the continuation of Moore's law for transistor scaling.

This ratio is universally optimal for a ferro-electric material and compared favorably to spintronic and CMOS switching elements such as MOS transistors and BJTs.

Combining Shannon inspired computing allows the physical stochastic errors inherent in highly scaled devices to be mitigated by information theoretic techniques.

Young, Nikonov, and Manipatruni have provided a list of 10 outstanding problems in quantum materials as they pertain to computational devices.

These problems have been subsequently addressed in numerous research works leading to various improved device properties for a future computer technology Beyond CMOS.

Compared to CMOS, MESO circuits could potentially require less energy for switching, lower operating voltage, and a higher integration density.